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Description
Sep 2, 1995 NXP Semiconductors. Product specification. NPN 5 GHz wideband transistor. BFR106 . DESCRIPTION. NPN silicon planar epitaxial transistor. Nov 21, 2013 BFR106 . Low Noise Silicon Bipolar RF Transistor. High linearity low noise RF transistor. 22 dBm OP1dB and 31 dBm OIP3. @ 900 MHz, 8 V, BFR106 . SP000011044 BFR106E6327HTSA1. 15.0. 210.0. 1.8. 13.0. 32.0. 22.0. 5.0. 700.0. SOT23. BFP193. SP000011024 BFP193E6327HTSA1. 12.0. 80.0. Material Content Data Sheet. Sales Product Name. BFR 106 E6327. Issued. 14. January 2016. MA#. MA000538708. Package. PG-SOT23-3-11. Weight*. When it comes to RF, the first thing on the designers mind is to meet the specified performance. NXP brings clarity to every aspect of your design challenge, so
| Part Number | BFR106 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - RF |
| Brand | Philips Semiconductors |
| Description | TRANSISTOR RF NPN 15V SOT-23 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz |
| Gain | 8.5dB ~ 13dB |
| Power - Max | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 70mA, 8V |
| Current - Collector (Ic) (Max) | 210mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23-3 |
| Image |  |
BFR106
PHILTPS
25860
0.72
YU TUO (HONGKONG) TRADING CO., LIMITED
BFR106
PHIL
3000
1.235
Hong Kong Capital Industrial Co.,Ltd
BFR106
PHILIPPINES
5000
1.75
Belt (HK) Electronics Co
BFR106
PHILP
21560
2.265
Yingxinyuan INT'L (Group) Limited
BFR106
PHLIPS
12000
2.78
Shenzhen Zhisheng Trading Co., Ltd
